Invention Grant
US08288778B2 Semiconductor device having semiconductor elements formed inside a resin film substrate
有权
具有形成在树脂膜基板内的半导体元件的半导体装置
- Patent Title: Semiconductor device having semiconductor elements formed inside a resin film substrate
- Patent Title (中): 具有形成在树脂膜基板内的半导体元件的半导体装置
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Application No.: US12672127Application Date: 2008-08-06
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Publication No.: US08288778B2Publication Date: 2012-10-16
- Inventor: Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
- Applicant: Seiichi Nakatani , Yoshihisa Yamashita , Takashi Kitae , Susumu Sawada
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2007-205203 20070807
- International Application: PCT/JP2008/002124 WO 20080806
- International Announcement: WO2009/019865 WO 20090212
- Main IPC: H01L51/52
- IPC: H01L51/52

Abstract:
A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided.A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor.
Public/Granted literature
- US20110204366A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY Public/Granted day:2011-08-25
Information query
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