Invention Grant
US08309387B2 Improving back-contact performance of group VI containing solar cells by utilizing a nanoscale interfacial layer
失效
通过利用纳米尺度的界面层,提高含有太阳能电池组VI的反接触性能
- Patent Title: Improving back-contact performance of group VI containing solar cells by utilizing a nanoscale interfacial layer
- Patent Title (中): 通过利用纳米尺度的界面层,提高含有太阳能电池组VI的反接触性能
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Application No.: US12102843Application Date: 2008-04-14
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Publication No.: US08309387B2Publication Date: 2012-11-13
- Inventor: David Forehand
- Applicant: David Forehand
- Agency: Carr LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/00

Abstract:
A method of making thermodynamically stable, diffusion-impeded barrier layers within, for example, a photovoltaic cell with a metal-containing electrical contact using exposure to fluorine. Exposing the cadmium telluride surface to fluorine creates a Te-poor barrier layer of cadmium fluoride. Once that barrier layer is formed, the metal-containing electrical contact may be applied or formed. The barrier layer allows tunneling current to occur between the p-type layer and the metal-containing electrical contact establishing a low-resistance, highly uniform, and thermally stable electrical contact.
Public/Granted literature
- US20080251119A1 LAYERS THAT IMPEDE DIFFUSION OF METALS IN GROUP VI ELEMENT-CONTAINING MATERIALS Public/Granted day:2008-10-16
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