Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
- Patent Title (中): 半导体装置及其制造方法,电路板和电子仪器
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Application No.: US12963887Application Date: 2010-12-09
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Publication No.: US08310057B2Publication Date: 2012-11-13
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP10-100580 19980327; JP11-041119 19990219
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A substrate includes an insulating film in which a penetrating hole is formed, the penetrating hole extending between a first surface of the insulating film and a second surface of the insulating film opposite to the first surface of the insulating film. A wiring pattern is adhered to the first surface of the insulating film by an adhesive material. A first portion of the wiring pattern is formed over the penetrating hole, and a part of the adhesive material is formed on an internal wall surface forming the penetrating hole so as not to stop up the penetrating hole. An external electrode contacts the first portion of the wiring pattern and projects through the penetrating hole and extends beyond the second surface of the insulating film.
Public/Granted literature
- US20110079898A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, CIRCUIT BOARD, AND ELECTRONIC INSTRUMENT Public/Granted day:2011-04-07
Information query
IPC分类: