Invention Grant
- Patent Title: Substrate structure and method for manufacturing the same
- Patent Title (中): 基板结构及其制造方法
-
Application No.: US12720238Application Date: 2010-03-09
-
Publication No.: US08322032B2Publication Date: 2012-12-04
- Inventor: Chih-Cheng Lee
- Applicant: Chih-Cheng Lee
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW98129881A 20090904
- Main IPC: H05K3/46
- IPC: H05K3/46 ; H05K3/42 ; H05K3/02

Abstract:
A method for manufacturing a substrate structure is provided. The method includes the following steps. A substrate is provided. The substrate has a patterned first metal layer, a pattern second metal layer and a through hole. After that, a first dielectric layer and a second dielectric layer are formed at a first surface and a second surface of the substrate, respectively. The second surface is opposite to the first surface. Then, the first dielectric layer and the second dielectric layer are patterned. After that, a first trace layer is formed at a surface of the patterned first dielectric layer. The first trace layer is embedded into the patterned first dielectric layer and is coplanar with the first dielectric layer. Then, a second trace layer is formed on a surface of the second dielectric layer.
Public/Granted literature
- US20110056739A1 SUBSTRATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-03-10
Information query