Invention Grant
US08323731B2 Method for preparing nanocrystalline silicon in SiO2 and freestanding silicon nanoparticles
有权
在SiO2和独立硅纳米粒子中制备纳米晶硅的方法
- Patent Title: Method for preparing nanocrystalline silicon in SiO2 and freestanding silicon nanoparticles
- Patent Title (中): 在SiO2和独立硅纳米粒子中制备纳米晶硅的方法
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Application No.: US11915427Application Date: 2006-05-26
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Publication No.: US08323731B2Publication Date: 2012-12-04
- Inventor: Jonathan Gordon Conn Veinot , Colin Michael Hessel
- Applicant: Jonathan Gordon Conn Veinot , Colin Michael Hessel
- Applicant Address: CA Edmonton, Alberta
- Assignee: The Governors of the University of Alberta
- Current Assignee: The Governors of the University of Alberta
- Current Assignee Address: CA Edmonton, Alberta
- Agency: Dinsmore & Shohl LLP
- International Application: PCT/CA2006/000851 WO 20060526
- International Announcement: WO2006/125313 WO 20061130
- Main IPC: B05D3/02
- IPC: B05D3/02
Abstract:
Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.
Public/Granted literature
- US20090117392A1 METHOD FOR PREPARING NANOCRYSTALLINE SILICON IN SIO2 AND FREESTANDING SILICON NANOPARTICLES Public/Granted day:2009-05-07
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