Invention Grant
- Patent Title: Manufacturing method of metal gate structure
- Patent Title (中): 金属门结构的制造方法
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Application No.: US13072795Application Date: 2011-03-28
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Publication No.: US08324118B2Publication Date: 2012-12-04
- Inventor: Chih-Chien Liu , Chun-Yuan Wu , Chin-Fu Lin , Teng-Chun Tsai , Chin-Cheng Chien
- Applicant: Chih-Chien Liu , Chun-Yuan Wu , Chin-Fu Lin , Teng-Chun Tsai , Chin-Cheng Chien
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A manufacturing method of a metal gate structure includes providing a substrate having at least a first metal oxide layer formed thereon, and transferring the surface of the first metal oxide layer into a second metal oxide layer. The first metal oxide layer includes a metal oxide (M1Ox) of a first metal (M1) and the second metal oxide layer includes a metal oxide ((M1M2Oy) of the first metal and a second metal (M2).
Public/Granted literature
- US20120248507A1 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-10-04
Information query
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