Invention Grant
- Patent Title: Metal capacitor and method of making the same including dielectric layer of different mechanical strength regions
- Patent Title (中): 金属电容器及其制造方法包括不同机械强度区域的介电层
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Application No.: US13342106Application Date: 2012-01-01
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Publication No.: US08324712B2Publication Date: 2012-12-04
- Inventor: Chin-Sheng Yang
- Applicant: Chin-Sheng Yang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene metal interconnection positioned in the first region; and a damascene capacitor electrode positioned in the second region.
Public/Granted literature
- US20120098094A1 METAL CAPACITOR AND METHOD OF MAKING THE SAME Public/Granted day:2012-04-26
Information query
IPC分类:
