Invention Grant
- Patent Title: III-V semiconductor core-heteroshell nanocrystals
- Patent Title (中): III-V半导体核 - 异质纳米晶体
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Application No.: US13105132Application Date: 2011-05-11
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Publication No.: US08343576B2Publication Date: 2013-01-01
- Inventor: Uri Banin , Assaf Aharoni
- Applicant: Uri Banin , Assaf Aharoni
- Applicant Address: IL Jerusalem
- Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem
- Current Assignee: Yissum Research Development Company of the Hebrew University of Jerusalem
- Current Assignee Address: IL Jerusalem
- Agency: Vorys, Sater, Seymour and Pease LLP
- Agent Susanne M. Hopkins
- Main IPC: B05D7/00
- IPC: B05D7/00
Abstract:
Provided is a core/multishell semiconductor nanocrystal including a core and multiple shells, which exhibits a type-I band offset and high photoluminescence quantum yield providing a bright tunable emission covering the visible range from about 400 nm to NIR over 1600 nm.
Public/Granted literature
- US20110212561A1 III-V SEMICONDUCTOR CORE-HETEROSHELL NANOCRYSTALS Public/Granted day:2011-09-01
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