Invention Grant
- Patent Title: Enhancement mode gallium nitride power devices
- Patent Title (中): 增强型氮化镓功率器件
-
Application No.: US13406723Application Date: 2012-02-28
-
Publication No.: US08344424B2Publication Date: 2013-01-01
- Inventor: Chang Soo Suh , Umesh Mishra
- Applicant: Chang Soo Suh , Umesh Mishra
- Applicant Address: US CA Goleta
- Assignee: Transphorm Inc.
- Current Assignee: Transphorm Inc.
- Current Assignee Address: US CA Goleta
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
Public/Granted literature
- US20120175680A1 ENHANCEMENT MODE GALLIUM NITRIDE POWER DEVICES Public/Granted day:2012-07-12
Information query
IPC分类: