Invention Grant
- Patent Title: Microstructure device including a metallization structure with self-aligned air gaps and refilled air gap exclusion zones
- Patent Title (中): 微结构器件包括具有自对准气隙的金属化结构和再填充气隙排除区
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Application No.: US12708230Application Date: 2010-02-18
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Publication No.: US08344474B2Publication Date: 2013-01-01
- Inventor: Robert Seidel , Thomas Werner
- Applicant: Robert Seidel , Thomas Werner
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102009010845 20090227
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
In a sophisticated metallization system, self-aligned air gaps may be provided in a locally selective manner by using a radiation sensitive material for filling recesses or for forming therein the metal regions. Consequently, upon selectively exposing the radiation sensitive material, a selective removal of exposed or non-exposed portions may be accomplished, thereby resulting in a highly efficient overall manufacturing flow.
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