Invention Grant
- Patent Title: Methods and circuits for generating reference voltage
- Patent Title (中): 产生参考电压的方法和电路
-
Application No.: US11191376Application Date: 2005-07-28
-
Publication No.: US08344792B2Publication Date: 2013-01-01
- Inventor: Seong Jin Jang
- Applicant: Seong Jin Jang
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2004-0065669 20040820
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A circuit for generating a reference voltage includes a first reference voltage generating circuit disposed outside a chip and a second reference voltage generating circuit disposed inside the chip. The first and second reference voltage generating circuits output first and second reference voltages to first and second output terminals, respectively. The second reference voltage generating circuit includes at least one pull-up resistor and at least one pull-down resistor. The pull-up resistor is coupled between a first node where an internal power supply voltage is coupled and the second output terminal. The pull-down resistor is coupled between a second node and the second output terminal, wherein a voltage at the second node is relatively lower than a voltage at the first node. A third reference voltage is outputted from a node where the first output terminal is coupled to the second output terminal.
Public/Granted literature
- US20060038577A1 Methods and circuits for generating reference voltage Public/Granted day:2006-02-23
Information query
IPC分类: