Invention Grant
- Patent Title: Implanted metal silicide for semiconductor device
- Patent Title (中): 用于半导体器件的注入金属硅化物
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Application No.: US12176133Application Date: 2008-07-18
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Publication No.: US08349732B2Publication Date: 2013-01-08
- Inventor: Harry Chuang , Hung-Chih Tsai , Keh-Chiang Ku , Kong-Beng Thei , Mong Song Liang
- Applicant: Harry Chuang , Hung-Chih Tsai , Keh-Chiang Ku , Kong-Beng Thei , Mong Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/44
Abstract:
A device and a method for forming a metal silicide is presented. A device, which includes a gate region, a source region, and a drain region, is formed on a substrate. A metal is disposed on the substrate, followed by a first anneal, forming a metal silicide on at least one of the gate region, the source region, and the drain region. The unreacted metal is removed from the substrate. The metal silicide is implanted with atoms. The implant is followed by a super anneal of the substrate.
Public/Granted literature
- US20100013029A1 Structure and a Method of Manufacture for Low Resistance NiSix Public/Granted day:2010-01-21
Information query
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