Stress buffer structures in a mounting structure of a semiconductor device

Invention Grant

US08354750B2 Stress buffer structures in a mounting structure of a semiconductor device 有权

Title translation: 半导体器件的安装结构中的应力缓冲结构

Patent Title: Stress buffer structures in a mounting structure of a semiconductor device
Patent Title (中): 半导体器件的安装结构中的应力缓冲结构
Application No.: US12697473

Application Date: 2010-02-01
Publication No.: US08354750B2

Publication Date: 2013-01-15
Inventor: Tzu-Yu Wang , Tzu-Wei Chiu , Shin-Puu Jeng
Applicant: Tzu-Yu Wang , Tzu-Wei Chiu , Shin-Puu Jeng
Applicant Address: TW
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW
Agency: Lowe Hauptman Ham & Berner, LLP
Main IPC: H01L23/498
IPC: H01L23/498

Abstract:

A mounting structure for a semiconductor device includes a stepwise stress buffer layer under a likewise stepwise UBM structure.

Abstract(Chinese):

半导体器件的安装结构包括在同样的逐步UBM结构下的逐步应力缓冲层。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置
H01L23/488	..由焊接或黏结结构组成
H01L23/498	...引线位于绝缘衬底上的