Invention Grant
US08357895B2 Defect inspection apparatus, defect inspection method, and semiconductor device manufacturing method
有权
缺陷检查装置,缺陷检查方法以及半导体装置的制造方法
- Patent Title: Defect inspection apparatus, defect inspection method, and semiconductor device manufacturing method
- Patent Title (中): 缺陷检查装置,缺陷检查方法以及半导体装置的制造方法
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Application No.: US12561109Application Date: 2009-09-16
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Publication No.: US08357895B2Publication Date: 2013-01-22
- Inventor: Osamu Nagano
- Applicant: Osamu Nagano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-247655 20080926
- Main IPC: H01J37/28
- IPC: H01J37/28

Abstract:
A defect inspection method includes generating and applies a charged beam to a sample with patterns; controlling a shape of the charged beam so that a beam width in a first direction perpendicular to an optical axis differs from a beam width in a second direction perpendicular to the optical axis and the first direction, while substantially maintaining a cross-sectional area of the beam; scanning the sample with the charged beam having the controlled shape; and detecting charged particles from the sample by irradiation of the charged beam and detects a defect of the patterns. Assuming that the beam width of the charged beam in the first direction is smaller than that in the second direction, the first direction is set to a direction in which an interval between adjacent patterns becomes a minimum value and the sample is scanned in the second direction.
Public/Granted literature
- US20100081217A1 DEFECT INSPECTION APPARATUS, DEFECT INSPECTION METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2010-04-01
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