Invention Grant
- Patent Title: Semiconductor device with a peripheral circuit formed therein
- Patent Title (中): 其中形成有外围电路的半导体器件
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Application No.: US12296624Application Date: 2007-10-01
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Publication No.: US08357942B2Publication Date: 2013-01-22
- Inventor: Kazutaka Takagi
- Applicant: Kazutaka Takagi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-270511 20061002
- International Application: PCT/JP2007/069221 WO 20071001
- International Announcement: WO2008/041682 WO 20080410
- Main IPC: H01L29/12
- IPC: H01L29/12

Abstract:
In a semiconductor device by which peripheral circuit sections, such as a semiconductor element, a matching circuit section, a bias circuit section, a capacitor element, are placed on and connected to a substrate, the semiconductor element can be grounded, and the semiconductor device which can make heat radiation characteristics of the semiconductor element satisfactory is provided, without providing a via hole into a semiconductor substrate.It includes: a semiconductor element (2) placed on a substrate (1); peripheral circuit sections (30) and (40) placed on the substrate (1) and connected with the semiconductor element (2); an electrode (30e) provided in the peripheral circuit section (30) and grounded; an electrode (30s) for grounding connected to a metal layer (30m), a metal layer (30m) and a source electrode (2s) of the semiconductor element (2); and an electrode (30d) connected to a gate electrode (2g) of the semiconductor element (2).
Public/Granted literature
- US20090267080A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-10-29
Information query
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