Invention Grant
- Patent Title: Integrating a capacitor in a metal gate last process
- Patent Title (中): 将电容器集成在金属栅极最后工艺中
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Application No.: US12256132Application Date: 2008-10-22
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Publication No.: US08368136B2Publication Date: 2013-02-05
- Inventor: Harry Chuang , Tzung-Chi Lee , Kong-Beng Thei , Sheng-Chen Chung , Mong-Song Liang
- Applicant: Harry Chuang , Tzung-Chi Lee , Kong-Beng Thei , Sheng-Chen Chung , Mong-Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/04
- IPC: H01L27/04
Abstract:
A semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, and at least one capacitor formed in the second region. The capacitor includes a top electrode having at least one stopping structure formed in the top electrode, the at least one stopping structure being of a different material from the top electrode, a bottom electrode, and a dielectric layer interposed between the top electrode and the bottom electrode.
Public/Granted literature
- US20100001332A1 INTEGRATING A CAPACITOR IN A METAL GATE LAST PROCESS Public/Granted day:2010-01-07
Information query
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