Invention Grant
US08368221B2 Hybrid contact structure with low aspect ratio contacts in a semiconductor device
有权
在半导体器件中具有低纵横比接触的混合接触结构
- Patent Title: Hybrid contact structure with low aspect ratio contacts in a semiconductor device
- Patent Title (中): 在半导体器件中具有低纵横比接触的混合接触结构
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Application No.: US12131332Application Date: 2008-06-02
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Publication No.: US08368221B2Publication Date: 2013-02-05
- Inventor: Frank Feustel , Kai Frohberg , Thomas Werner
- Applicant: Frank Feustel , Kai Frohberg , Thomas Werner
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102007057682 20071130
- Main IPC: H01L29/40
- IPC: H01L29/40
Abstract:
By forming the first metallization layer of a semiconductor device as a dual damascene structure, the contact elements may be formed on the basis of a significantly reduced aspect ratio, thereby enhancing process robustness and also improving electrical performance of the contact structure.
Public/Granted literature
- US20090140431A1 HYBRID CONTACT STRUCTURE WITH LOW ASPECT RATIO CONTACTS IN A SEMICONDUCTOR DEVICE Public/Granted day:2009-06-04
Information query
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