Invention Grant
- Patent Title: Method of manufacturing a substrate structure
- Patent Title (中): 制造衬底结构的方法
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Application No.: US12574350Application Date: 2009-10-06
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Publication No.: US08377506B2Publication Date: 2013-02-19
- Inventor: Chih-Cheng Lee
- Applicant: Chih-Cheng Lee
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97151291A 20081229
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C25D5/02 ; C23C14/00

Abstract:
A substrate structure is provided. The substrate structure includes a substrate, a first insulation layer, a conductive part, a second insulation layer, a seed layer and a conductive layer. The substrate has a first circuit pattern layer and a second circuit pattern layer, which are located on two opposite surfaces of the substrate respectively. The first insulation layer formed on the first circuit pattern layer has a first insulation hole, which exposes a first opening in the outer surface of the first insulation layer. The conductive part formed on the first insulation hole for electrically connecting with a chip is enclosed by the edge of the first opening. The second insulation layer formed on the second circuit pattern layer has a second insulation hole in which the seed layer is formed. The conductive layer is formed on the seed layer for electrically connecting with a circuit board.
Public/Granted literature
- US20100163287A1 SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-07-01
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