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US08378313B2 Uniformity of a scanned ion beam 有权
扫描离子束的均匀性

Uniformity of a scanned ion beam
Abstract:
One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.
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