Invention Grant
US08378561B2 Electron emitter and field emission device provided with electron emitter
有权
具有电子发射体的电子发射体和场发射装置
- Patent Title: Electron emitter and field emission device provided with electron emitter
- Patent Title (中): 具有电子发射体的电子发射体和场发射装置
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Application No.: US13055560Application Date: 2009-07-30
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Publication No.: US08378561B2Publication Date: 2013-02-19
- Inventor: Yoshihisa Ishiguro , Masanori Haba , Ryouichi Suzuki
- Applicant: Yoshihisa Ishiguro , Masanori Haba , Ryouichi Suzuki
- Applicant Address: JP Tokyo
- Assignee: Life Technology Research Institute, Inc.
- Current Assignee: Life Technology Research Institute, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2008-198809 20080731; JP2009-003713 20090109
- International Application: PCT/JP2009/063563 WO 20090730
- International Announcement: WO2010/013772 WO 20100204
- Main IPC: H01J63/04
- IPC: H01J63/04

Abstract:
An electron emitter includes a guard electrode 13 on the outer circumferential side of a carbon film structure 10 which is formed on a substrate 7 by plasma CVD method. This guard electrode 13 includes a curved surface portion (a curved surface portion that curves from top toward a side opposite to the film-forming direction) 13a convex in a film-forming direction of the carbon film structure 10. A curvature radius R1 of an outer-circumferential-side portion of the curved surface portion 13a is larger than or equal to a curvature radius R2 of a carbon-film-structure-side portion of the curved surface portion 13a.
Public/Granted literature
- US20110115363A1 ELECTRON EMITTER AND FIELD EMISSION DEVICE PROVIDED WITH ELECTRON EMITTER Public/Granted day:2011-05-19
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