Invention Grant
- Patent Title: Double patterning mask set and method of forming thereof
- Patent Title (中): 双重图案掩模组及其形成方法
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Application No.: US13109006Application Date: 2011-05-17
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Publication No.: US08383299B2Publication Date: 2013-02-26
- Inventor: Te-Hsien Hsieh , Ming-Jui Chen , Shih-Ming Kuo , Ping-I Hsieh , Cheng-Te Wang , Jing-Yi Lee
- Applicant: Te-Hsien Hsieh , Ming-Jui Chen , Shih-Ming Kuo , Ping-I Hsieh , Cheng-Te Wang , Jing-Yi Lee
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F1/36
- IPC: G03F1/36
Abstract:
A double patterning mask set includes a first mask having a first set of via patterns, and a second mask having a second set of via patterns. The first set of via patterns includes at least two via patterns arranged along a diagonal direction, each of the at least two via patterns has at least a truncated corner. The first set of via patterns and the second set of via patterns are interlacedly arranged along a horizontal direction and a vertical direction.
Public/Granted literature
- US20120295186A1 DOUBLE PATTERNING MASK SET AND METHOD OF FORMING THEREOF Public/Granted day:2012-11-22
Information query
