Invention Grant
- Patent Title: Thermal interface material and semiconductor component including the thermal interface material
- Patent Title (中): 热界面材料和包括热界面材料的半导体组件
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Application No.: US11147598Application Date: 2005-06-07
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Publication No.: US08384210B1Publication Date: 2013-02-26
- Inventor: Richard C. Blish, II , James L. Hayward
- Applicant: Richard C. Blish, II , James L. Hayward
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A thermal interface material for use in manufacturing a semiconductor component and a method for manufacturing the semiconductor component. The thermal interface material includes a metallic element in combination with either antimony or tin. Suitable metallic elements include gallium or indium. The concentration of antimony or tin is about 2 percent or less by weight of the thermal interface material. A semiconductor chip is mounted to a support substrate and the thermal interface material is disposed on the semiconductor chip. A lid or a heatsink is coupled to the semiconductor chip via the thermal interface material.
Information query
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