Invention Grant
- Patent Title: Semiconductor structure, pad structure and protection structure
- Patent Title (中): 半导体结构，焊盘结构和保护结构
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Application No.: US12577734Application Date: 2009-10-13
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Publication No.: US08384214B2Publication Date: 2013-02-26
- Inventor: Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
- Applicant: Hui-Min Wu , Bang-Chiang Lan , Ming-I Wang , Tzung-I Su , Chien-Hsin Huang , Chao-An Su , Tzung-Han Tan , Min Chen , Meng-Jia Lin
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L23/02 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a substrate, a dielectric layer, a pad structure and a protection structure. The dielectric layer is disposed on the substrate. The pad structure is disposed in the dielectric layer. The pad structure includes a plurality of first metal layers and a plurality of plugs which are electrically connected to each other vertically. There is no contact plug disposed between the pad structure and the substrate. The protection structure is disposed in the dielectric layer and encompasses the pad structure.
Public/Granted literature
- US20110084394A1 Semiconductor Structure Public/Granted day:2011-04-14
Information query
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