Invention Grant
- Patent Title: Matrix-type cold-cathode electron source device
- Patent Title (中): 矩阵型冷阴极电子源装置
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Application No.: US12991005Application Date: 2009-04-27
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Publication No.: US08384281B2Publication Date: 2013-02-26
- Inventor: Makoto Yamamoto , Keisuke Koga
- Applicant: Makoto Yamamoto , Keisuke Koga
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2008-124316 20080512
- International Application: PCT/JP2009/001911 WO 20090427
- International Announcement: WO2009/139122 WO 20091119
- Main IPC: H01J1/30
- IPC: H01J1/30 ; H01J1/304 ; H01J1/46
Abstract:
A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
Public/Granted literature
- US20110057555A1 MATRIX-TYPE COLD-CATHODE ELECTRON SOURCE DEVICE Public/Granted day:2011-03-10
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