A manufacturing method for a dual damascene structure includes providing a substrate having a dielectric layer, a first hard mask layer and a second hard mask layer sequentially formed thereon, performing a first double patterning process to sequentially form a plurality of first trench openings and a plurality of second trench openings in the second hard mask layer, performing a second double patterning process to sequentially form a plurality of first via openings and a plurality of second via openings in the fist hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings.