Invention Grant
US08423846B2 Integrated circuit with memory built-in self test (MBIST) circuitry having enhanced features and methods
有权
具有内存自检(MBIST)电路的集成电路具有增强的特性和方法
- Patent Title: Integrated circuit with memory built-in self test (MBIST) circuitry having enhanced features and methods
- Patent Title (中): 具有内存自检(MBIST)电路的集成电路具有增强的特性和方法
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Application No.: US12883441Application Date: 2010-09-16
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Publication No.: US08423846B2Publication Date: 2013-04-16
- Inventor: Wei-Yu Chen , Kevin Badgett , Kay Hessee
- Applicant: Wei-Yu Chen , Kevin Badgett , Kay Hessee
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Volpe and Koenig, P.C.
- Main IPC: G01R31/28
- IPC: G01R31/28

Abstract:
Integrated circuits with memory built-in self test (MBIST) circuitry and methods are disclosed that employ enhanced features. In one aspect of the invention, an integrated circuit is provided having MIBST circuitry configured to serially test multiple arrays of memory elements within a component of the integrated circuit and to also conduct parallel initialization of the serially tested arrays. In another aspect of the invention, the MBST circuitry is used set the memory elements of the arrays to a first state and then to an inverse state during a burn-in operation to maintain each of the two opposing states for a desired time in order to either force a failure of the integrated circuit component or produce a pre-stressed component beyond an infancy stage.
Public/Granted literature
- US20120072788A1 INTEGRATED CIRCUIT WITH MEMORY BUILT-IN SELF TEST (MBIST) CIRCUITRY HAVING ENHANCED FEATURES AND METHODS Public/Granted day:2012-03-22
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