Invention Grant
- Patent Title: Substrate processing apparatus, substrate annealing method, and semiconductor device manufacturing method
- Patent Title (中): 基板处理装置,基板退火方法以及半导体装置的制造方法
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Application No.: US12636928Application Date: 2009-12-14
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Publication No.: US08426323B2Publication Date: 2013-04-23
- Inventor: Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
- Applicant: Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2008-318426 20081215; JP2009-278040 20091207
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B05C11/11

Abstract:
A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage.
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