Invention Grant
- Patent Title: Semiconductor device with decoupling capacitor design
- Patent Title (中): 具有去耦电容设计的半导体器件
-
Application No.: US12212096Application Date: 2008-09-17
-
Publication No.: US08436408B2Publication Date: 2013-05-07
- Inventor: Kuo-Chi Tu , Huey-Chi Chu , Kuo-Cheng Ching
- Applicant: Kuo-Chi Tu , Huey-Chi Chu , Kuo-Cheng Ching
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/108
- IPC: H01L27/108

Abstract:
An integrated circuit includes a circuit module having a plurality of active components coupled between a pair of supply nodes, and a capacitive decoupling module coupled to the circuit module. The capacitive decoupling module includes a plurality of metal-insulator-metal (MiM) capacitors coupled in series between the pair of supply nodes, wherein a voltage between the supply nodes is divided across the plurality of MiM capacitors, thereby reducing voltage stress on the capacitors.
Public/Granted literature
- US20100065944A1 SEMICONDUCTOR DEVICE WITH DECOUPLING CAPACITOR DESIGN Public/Granted day:2010-03-18
Information query
IPC分类: