Invention Grant
- Patent Title: Method of fabricating silicon nitride gap-filling layer
- Patent Title (中): 制造氮化硅间隙填充层的方法
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Application No.: US11853475Application Date: 2007-09-11
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Publication No.: US08440580B2Publication Date: 2013-05-14
- Inventor: Neng-Kuo Chen , Chao-Ching Hsieh , Chien-Chung Huang
- Applicant: Neng-Kuo Chen , Chao-Ching Hsieh , Chien-Chung Huang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then, a post-single step deposition process is conducted to form a cap layer constituting as a sparse film on the stacked layer, wherein the cap layer has a thickness of at least 10% of the total film thickness.
Public/Granted literature
- US20090068854A1 SILICON NITRIDE GAP-FILLING LAYER AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-03-12
Information query
IPC分类:
