Invention Grant
- Patent Title: Data storage medium and associated method
- Patent Title (中): 数据存储介质及相关方法
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Application No.: US12338281Application Date: 2008-12-18
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Publication No.: US08445122B2Publication Date: 2013-05-21
- Inventor: Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
- Applicant: Chrystel Deguet , Laurent Clavelier , Franck Fournel , Jean-Sebastien Moulet
- Applicant Address: FR Paris FR Bernin
- Assignee: Commissariat a l 'Energie Atomique,S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee: Commissariat a l 'Energie Atomique,S.O.I. Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Paris FR Bernin
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0760297 20071221
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L21/02

Abstract:
A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
Public/Granted literature
- US20090161405A1 DATA STORAGE MEDIUM AND ASSOCIATED METHOD Public/Granted day:2009-06-25
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