Invention Grant
- Patent Title: Developing device and developing method
- Patent Title (中): 开发设备和开发方法
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Application No.: US13024939Application Date: 2011-02-10
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Publication No.: US08445189B2Publication Date: 2013-05-21
- Inventor: Taro Yamamoto , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
- Applicant: Taro Yamamoto , Kousuke Yoshihara , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
- Applicant Address: JP Tokyo-To
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo-To
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-435894 20031226
- Main IPC: G03C5/18
- IPC: G03C5/18 ; G03C5/26 ; B05B7/06 ; B05B3/00

Abstract:
The temperature of a developing solution is varied depending on the type of resist or the resist pattern. The developing solution is applied while scanning a developer nozzle having a slit-shaped ejection port that has a length matching the width of the effective area of the substrate. After leaving the substrate with the developing solution being coated thereon for a predetermined period of time, a diluent is supplied while scanning a diluent nozzle, thereby substantially stopping the development reaction and causing the dissolved resist components to diffuse. A desired amount of resist can be quickly dissolved through the control of the developing solution temperature, while the development can be stopped before the dissolved resist components exhibit adverse effect through the supply of the diluent a predetermined timing, whereby achieving a pattern having a uniform line width and improved throughput.
Public/Granted literature
- US20110127236A1 DEVELOPING DEVICE AND DEVELOPING METHOD Public/Granted day:2011-06-02
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