Invention Grant
- Patent Title: Method of fabricating an image sensor structure
- Patent Title (中): 制作图像传感器结构的方法
-
Application No.: US13653417Application Date: 2012-10-17
-
Publication No.: US08455294B2Publication Date: 2013-06-04
- Inventor: Cheng-Hung Yu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for making the image sensor structure, for avoiding or mitigating lens shading effect. The image sensor structure includes a substrate, a sensor array disposed at the surface of the substrate, a dielectric layer covering the sensor array, wherein the dielectric layer includes a top surface having a dishing structure, an under layer filled into the dishing structure and having a refraction index greater than that of the dielectric layer, a filter array disposed on the under layer corresponding to the sensor array, and a microlens array disposed above the filter array. A top layer may be additionally disposed to cover the filter array and the microlens array is disposed on the top layer.
Public/Granted literature
- US20130040416A1 Method of fabricating an image sensor structure Public/Granted day:2013-02-14
Information query
IPC分类: