Invention Grant
- Patent Title: Barrier layer for integrated circuit contacts
- Patent Title (中): 用于集成电路触点的阻挡层
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Application No.: US13083868Application Date: 2011-04-11
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Publication No.: US08461043B2Publication Date: 2013-06-11
- Inventor: Avraham Rozenblat , Shai Haimson , Rotem Drori , Maor Rotlain , Dror Horvitz
- Applicant: Avraham Rozenblat , Shai Haimson , Rotem Drori , Maor Rotlain , Dror Horvitz
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.
Public/Granted literature
- US20120256317A1 Barrier Layer for Integrated Circuit Contacts Public/Granted day:2012-10-11
Information query
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