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US08461043B2 Barrier layer for integrated circuit contacts 有权
用于集成电路触点的阻挡层

Barrier layer for integrated circuit contacts
Abstract:
Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of diborane, forming a boron layer between a metallic contact and the surrounding dielectric and between a metallic contact and the substrate and/or substrate contact. This boron layer may be substantially pure boron and boron silicide.
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