Invention Grant
- Patent Title: Spacer shape engineering for void-free gap-filling process
- Patent Title (中): 无间隙填充过程的间隔形状工程
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Application No.: US13270585Application Date: 2011-10-11
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Publication No.: US08461654B2Publication Date: 2013-06-11
- Inventor: Ming-Yuan Wu , Yi-Shien Mor , Chih-Tang Peng , Chiung-Han Yeh , Kong-Beng Thei , Harry Chuang , Mong-Song Liang
- Applicant: Ming-Yuan Wu , Yi-Shien Mor , Chih-Tang Peng , Chiung-Han Yeh , Kong-Beng Thei , Harry Chuang , Mong-Song Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method of forming a semiconductor device includes providing a semiconductor substrate; forming a gate stack on the semiconductor substrate; forming a gate spacer adjacent to a sidewall of the gate stack; thinning the gate spacer; and forming a secondary gate spacer on a sidewall of the gate spacer after the step of thinning the gate spacer.
Public/Granted literature
- US20120025329A1 Spacer Shape Engineering for Void-Free Gap-Filling Process Public/Granted day:2012-02-02
Information query
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