Invention Grant
- Patent Title: Resistor and manufacturing method thereof
- Patent Title (中): 电阻及其制造方法
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Application No.: US13220721Application Date: 2011-08-30
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Publication No.: US08477006B2Publication Date: 2013-07-02
- Inventor: Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
- Applicant: Jie-Ning Yang , Shih-Chieh Hsu , Chun-Hsien Lin , Yao-Chang Wang , Chi-Horn Pai , Chi-Sheng Tseng
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01C1/012
- IPC: H01C1/012
Abstract:
A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
Public/Granted literature
- US20130049924A1 RESISTOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-02-28
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