Invention Grant
- Patent Title: Electrostatic discharge protection circuit
- Patent Title (中): 静电放电保护电路
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Application No.: US13190578Application Date: 2011-07-26
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Publication No.: US08477467B2Publication Date: 2013-07-02
- Inventor: Lu-An Chen , Tai-Hsiang Lai , Tien-Hao Tang
- Applicant: Lu-An Chen , Tai-Hsiang Lai , Tien-Hao Tang
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
An electrostatic discharge protection circuit is located between a first voltage terminal and a second voltage terminal. The electrostatic discharge protection circuit includes a first semiconductor switch and a second semiconductor switch. The first semiconductor switch is electrically connected to the first voltage terminal. If a voltage at the first voltage terminal complies with a starting condition, the first semiconductor switch is turned on, so that an electrostatic discharge current flows through the first voltage terminal and the first semiconductor switch. The second semiconductor switch is electrically connected between the first semiconductor switch and the second voltage terminal, wherein the electrostatic discharge current from the first semiconductor switch passes to the second voltage terminal through the second semiconductor switch.
Public/Granted literature
- US20130027821A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2013-01-31
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