Invention Grant
- Patent Title: Capacitor structure
- Patent Title (中): 电容结构
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Application No.: US13198286Application Date: 2011-08-04
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Publication No.: US08477475B2Publication Date: 2013-07-02
- Inventor: Kai-Ling Chiu , Victor Chiang Liang , Chih-Yu Tseng , Hui-Sheng Chang , Chia-Te Chien , You-Ren Liu
- Applicant: Kai-Ling Chiu , Victor Chiang Liang , Chih-Yu Tseng , Hui-Sheng Chang , Chia-Te Chien , You-Ren Liu
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT PC
- Agent Justin King
- Main IPC: H01G4/30
- IPC: H01G4/30

Abstract:
A capacitor structure includes a plurality of conductive line levels located over the substrate. Each of the conductive line levels includes a first conductive line and a second conductive line. The first conductive lines in the conductive line levels form a first conductive line co-plane and the second conductive lines in the conductive line levels form a second conductive line co-plane. A first conductive end is electrically connected to the first conductive lines on the conductive line levels. A second conductive end is electrically connected to the second conductive lines on the conductive line levels. A plurality of vias are located between the neighboring conductive line levels and placed on only one of the first and second conductive line co-planes on a same level.
Public/Granted literature
- US20110292565A1 CAPACITOR STRUCTURE Public/Granted day:2011-12-01
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