Invention Grant
- Patent Title: Method for fabricating through-silicon via structure
- Patent Title (中): 通硅结构制造方法
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Application No.: US13108969Application Date: 2011-05-16
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Publication No.: US08481425B2Publication Date: 2013-07-09
- Inventor: Yen-Liang Lu , Chun-Ling Lin , Chi-Mao Hsu , Chin-Fu Lin , Chun-Hung Chen , Tsun-Min Cheng , Meng-Hong Tsai
- Applicant: Yen-Liang Lu , Chun-Ling Lin , Chi-Mao Hsu , Chin-Fu Lin , Chun-Hung Chen , Tsun-Min Cheng , Meng-Hong Tsai
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for fabricating through-silicon via structure is disclosed. The method includes the steps of: providing a semiconductor substrate; forming a through-silicon via in the semiconductor substrate; covering a liner in the through-silicon via; performing a baking process on the liner; forming a barrier layer on the liner; and forming a through-silicon via electrode in the through-silicon via.
Public/Granted literature
- US20120295437A1 METHOD FOR FABRICATING THROUGH-SILICON VIA STRUCTURE Public/Granted day:2012-11-22
Information query
IPC分类:
