Invention Grant
US08482088B2 MEMS device with reduced stress in the membrane and manufacturing method
有权
薄膜中应力降低的MEMS器件及其制造方法
- Patent Title: MEMS device with reduced stress in the membrane and manufacturing method
- Patent Title (中): 薄膜中应力降低的MEMS器件及其制造方法
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Application No.: US12678903Application Date: 2008-09-18
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Publication No.: US08482088B2Publication Date: 2013-07-09
- Inventor: Richard Ian Laming , Colin Robert Jenkins , Anthony Bernard Traynor
- Applicant: Richard Ian Laming , Colin Robert Jenkins , Anthony Bernard Traynor
- Applicant Address: GB Edinburgh
- Assignee: Wolfson Microelectronics plc
- Current Assignee: Wolfson Microelectronics plc
- Current Assignee Address: GB Edinburgh
- Agency: Dickstein Shapiro LLP
- Priority: GB0718308.0 20070919
- International Application: PCT/GB2008/003162 WO 20080918
- International Announcement: WO2009/037456 WO 20090326
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A MEMS device comprises a membrane layer and a back-plate layer formed over the membrane layer. The membrane layer comprises an outer portion and an inner portion raised relative to the outer portion and a sidewall for connecting the inner portion and the outer portion. The sidewall is non-orthogonal to the outer portion.
Public/Granted literature
- US20100244162A1 MEMS DEVICE WITH REDUCED STRESS IN THE MEMBRANE AND MANUFACTURING METHOD Public/Granted day:2010-09-30
Information query
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