Invention Grant
- Patent Title: Interconnect structure comprising blind vias intended to be metalized
- Patent Title (中): 互连结构，包括想要金属化的盲孔
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Application No.: US13031917Application Date: 2011-02-22
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Publication No.: US08482130B2Publication Date: 2013-07-09
- Inventor: Damien Saint-Patrice , Sebastien Bolis , Fabrice Jacquet
- Applicant: Damien Saint-Patrice , Sebastien Bolis , Fabrice Jacquet
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1051727 20100310
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
An interconnect structure including: at least one first substrate, whereof at least one first face is made integral with at least one face of at least one second substrate, at least one blind via passing through the first substrate and emerging at the first face of the first substrate and at a second face, opposite the first face, of the first substrate, at least one electric contact arranged against said face of the second substrate and opposite the blind via, and/or against the first face and/or against the second face of the first substrate, at least one channel putting the blind via in communication with an environment outside the interconnect structure and/or with at least one cavity formed in the interconnect structure, and extending substantially parallel to one of said faces of the first or second substrate.
Public/Granted literature
- US20110221068A1 INTERCONNECT STRUCTURE COMPRISING BLIND VIAS INTENDED TO BE METALIZED Public/Granted day:2011-09-15
Information query
IPC分类:
