Invention Grant
- Patent Title: Plasma as a band pass filter for photo lithography
- Patent Title (中): 等离子体作为光刻胶片的带通滤光片
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Application No.: US12644591Application Date: 2009-12-22
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Publication No.: US08493546B2Publication Date: 2013-07-23
- Inventor: Francis Goodwin
- Applicant: Francis Goodwin
- Applicant Address: US TX Austin
- Assignee: Sematech, Inc.
- Current Assignee: Sematech, Inc.
- Current Assignee Address: US TX Austin
- Agency: Fulbright & Jaworski LLP
- Main IPC: G03B27/42
- IPC: G03B27/42

Abstract:
A band pass filter includes a first electrode, a second electrode, and a plasma generated by the first and second electrode. The plasma is confined to a region of space through which electromagnetic waves having a frequency above an intrinsic plasma frequency are transmitted, and electromagnetic waves having a frequency below the intrinsic plasma frequency are reflected. The band pass filter may be implemented in a photo lithography tool between a source module and an exposure module. The plasma of the band pass filter may be adapted to reduce IR radiation (or other out of band radiation) exposure to the exposure module by reflecting IR radiation back to the radiation source. In an extreme ultraviolet photo lithography tool, the plasma of the band pass filter may be adapted to transmit EUV radiation.
Public/Granted literature
- US20110149260A1 Plasma as a Band Pass Filter for Photo Lithography Public/Granted day:2011-06-23
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