公开(公告)号：US20070182943A1

公开(公告)日：2007-08-09

申请号：US11347867

申请日：2006-02-06

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/42

CPC classification number: G03F7/70916

Abstract: Apparatus, system, and method for reducing contamination of semiconductor device wafers in immersion lithography fabrication. A preferred embodiment comprises a support ring to provide structural integrity to the apparatus and a planar ring formed on one side of the support ring. The planar ring has a plurality of openings formed through the planar ring. The apparatus is placed into a trench of a wafer stage and the openings permit excess immersion fluid to pass through, into the trench, where it can be removed. However, the apparatus prevents the excess immersion fluid and contaminants from within the trench from being drawn back onto the wafer stage by the motion of the wafer stage, potentially contaminating a semiconductor wafer.

Abstract translation: 用于减少浸没光刻制造中半导体器件晶片污染的装置，系统和方法。 一个优选实施例包括一个支撑环，以提供结构完整性的装置和形成在支撑环的一侧的平面环。 平面环具有穿过平面环形成的多个开口。 该设备被放置在晶片台的沟槽中，并且开口允许多余的浸没流体通过，进入沟槽，其中可以将其移除。 然而，该装置防止来自沟槽内的多余的浸没流体和污染物被晶片台的运动引回到晶片台上，从而可能污染半导体晶片。

公开(公告)号：US20050188342A1

公开(公告)日：2005-08-25

申请号：US10780884

申请日：2004-02-19

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/70633

Abstract: From a plurality of overlay targets formed with patterns on a test wafer, subsets are formed and for each overlay target contained in the subsets, the measurement results of overlay shifts are obtained. Mean shifts, residual data and ranges are calculated for each subset and compared with the 100% full field results. The subset that represents the full field results to highest agreement is selected and used to measure the overlay of a second or any further wafer. A most preferred embodiment relates to selecting each of the subsets in a form such that the overlay target positions are concentric about the wafer center. In a further advantageous aspect, each of the subsets is confined to concentric areas about the wafer center, e.g., an inner circle and/or one or more outer rings. A distribution of selected overlay targets placed in representative regions on the wafer is thus guaranteed.

Abstract translation: 从在测试晶片上形成有图案的多个覆盖目标中，形成子集，并且对于包含在子集中的每个覆盖目标，获得覆盖偏移的测量结果。 计算每个子集的平均位移，残差数据和范围，并与100％全场结果进行比较。 选择表示全场的子集达到最高的一致性，并用于测量第二个或任何另外的晶片的叠加。 最优选的实施例涉及以使得覆盖目标位置与晶片中心同心的形式来选择每个子集。 在另一个有利的方面，每个子集被限制在围绕晶片中心的同心区域，例如内圆和/或一个或多个外环。 因此保证放置在晶片上的代表性区域中的所选覆盖目标的分布。

公开(公告)号：US08493546B2

公开(公告)日：2013-07-23

申请号：US12644591

申请日：2009-12-22

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/42

CPC classification number: G03F7/70575

Abstract: A band pass filter includes a first electrode, a second electrode, and a plasma generated by the first and second electrode. The plasma is confined to a region of space through which electromagnetic waves having a frequency above an intrinsic plasma frequency are transmitted, and electromagnetic waves having a frequency below the intrinsic plasma frequency are reflected. The band pass filter may be implemented in a photo lithography tool between a source module and an exposure module. The plasma of the band pass filter may be adapted to reduce IR radiation (or other out of band radiation) exposure to the exposure module by reflecting IR radiation back to the radiation source. In an extreme ultraviolet photo lithography tool, the plasma of the band pass filter may be adapted to transmit EUV radiation.

Abstract translation: 带通滤波器包括第一电极，第二电极和由第一和第二电极产生的等离子体。 等离子体被限制在具有高于固有等离子体频率的频率的电磁波的空间区域，并且具有低于固有等离子体频率的频率的电磁波被反射。 带通滤波器可以在源模块和曝光模块之间的光刻工具中实现。 带通滤波器的等离子体可以适于通过将IR辐射反射回辐射源来减少暴露于曝光模块的IR辐射（或其它带外辐射）。 在极紫外光刻工具中，带通滤波器的等离子体可适于传输EUV辐射。

公开(公告)号：US20070287073A1

公开(公告)日：2007-12-13

申请号：US11448455

申请日：2006-06-07

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/54 ,  G03F1/00

CPC classification number: G03F7/70316 ,  G02B27/4205 ,  G03F7/70158

Abstract: Lithography systems and methods are disclosed. A preferred embodiment comprises a lithography system including a support for a substrate, a projection lens system, an illuminator adapted to direct light towards the support for the substrate through the projection lens system along an optical path, and at least one Fresnel element disposed in the optical path.

Abstract translation: 公开了平版印刷系统和方法。 优选实施例包括光刻系统，其包括用于衬底的支撑件，投影透镜系统，照明器，其适于沿着光路通过投影透镜系统将光引向基板的支撑件，以及至少一个菲涅耳元件 光路。

公开(公告)号：US06948149B2

公开(公告)日：2005-09-20

申请号：US10780884

申请日：2004-02-19

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03F7/20 ,  G06F17/50

CPC classification number: G03F7/70633

Abstract: From a plurality of overlay targets formed with patterns on a test wafer, subsets are formed and for each overlay target contained in the subsets, the measurement results of overlay shifts are obtained. Mean shifts, residual data and ranges are calculated for each subset and compared with the 100% full field results. The subset that represents the full field results to highest agreement is selected and used to measure the overlay of a second or any further wafer. A most preferred embodiment relates to selecting each of the subsets in a form such that the overlay target positions are concentric about the wafer center. In a further advantageous aspect, each of the subsets is confined to concentric areas about the wafer center, e.g., an inner circle and/or one or more outer rings. A distribution of selected overlay targets placed in representative regions on the wafer is thus guaranteed.

Abstract translation: 从在测试晶片上形成有图案的多个覆盖目标中，形成子集，并且对于包含在子集中的每个覆盖目标，获得覆盖偏移的测量结果。 计算每个子集的平均位移，残差数据和范围，并与100％全场结果进行比较。 选择表示全场的子集达到最高的一致性，并用于测量第二个或任何另外的晶片的叠加。 最优选的实施例涉及以使得覆盖目标位置与晶片中心同心的形式来选择每个子集。 在另一个有利的方面，每个子集被限制在围绕晶片中心的同心区域，例如内圆和/或一个或多个外环。 因此保证放置在晶片上的代表性区域中的所选覆盖目标的分布。

公开(公告)号：US07291569B2

公开(公告)日：2007-11-06

申请号：US11170200

申请日：2005-06-29

Applicant: Francis Goodwin ,  Stefan Brandl ,  Brian Martinick

Inventor： Francis Goodwin ,  Stefan Brandl ,  Brian Martinick

IPC: H01L21/00

CPC classification number: G03F7/2041 ,  G03F7/70341

Abstract: Fluids for use in immersion lithography systems are disclosed. A resistivity-altering substance is introduced into a fluid, making it more conductive. The fluid is then disposed between an immersion head of a projection lens system and a semiconductor wafer during an exposure process. Because the fluid is conductive, electrostatic energy that may develop during the movement of the semiconductor wafer with respect to the projection lens system during the exposure process is discharged through the conductive fluid, preventing damage to an immersion head of the projection lens system, the semiconductor wafer, and sensors of a stage that supports the semiconductor wafer.

公开(公告)号：US07286205B2

公开(公告)日：2007-10-23

申请号：US11114566

申请日：2005-04-25

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/52

CPC classification number: G03F7/70341

Abstract: A closing disk for an immersion head of an immersion lithography system is disclosed. The closing disk makes contact with the immersion head at the edges of the closing disk, but not the center, preventing damage to the bottom surface of the immersion head and also to the closing disk. The closing disk may be transparent or opaque, and may be aligned to the immersion head using optical or mechanical alignment.

Abstract translation: 公开了一种用于浸没式光刻系统的浸没头的封闭盘。 闭合盘在闭合盘的边缘处与浸没头接触，而不是中心接触，防止浸没头的底表面以及关闭盘的损坏。 闭合盘可以是透明的或不透明的，并且可以使用光学或机械对准与浸入头对准。

公开(公告)号：US20050202327A1

公开(公告)日：2005-09-15

申请号：US10798332

申请日：2004-03-12

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/00 ,  G03C5/00 ,  G03F7/00 ,  G03F9/00

CPC classification number: G03F1/44 ,  G03F7/70641 ,  G03F7/70683

Abstract: A pattern can be projected on a resist film layer deposited on a semiconductor surface. The pattern can include structural elements having different feature sizes. Structural elements having feature sizes below a certain limit are not resolved on the resist film layer. The dimension of the corresponding resist pattern can be reduced and the difference can be related to focus parameters of the exposure tool.

Abstract translation: 可以将图案投影在沉积在半导体表面上的抗蚀剂膜层上。 该图案可以包括具有不同特征尺寸的结构元件。 特征尺寸低于某一极限的结构元件在抗蚀剂膜层上没有得到解决。 可以减小对应抗蚀剂图案的尺寸，并且该差异可以与曝光工具的焦点参数相关。

公开(公告)号：US20110149260A1

公开(公告)日：2011-06-23

申请号：US12644591

申请日：2009-12-22

Applicant: Francis Goodwin

Inventor： Francis Goodwin

IPC: G03B27/54 ,  H01J3/00

CPC classification number: G03F7/70575

Abstract: A band pass filter includes a first electrode, a second electrode, and a plasma generated by the first and second electrode. The plasma is confined to a region of space through which electromagnetic waves having a frequency above an intrinsic plasma frequency are transmitted, and electromagnetic waves having a frequency below the intrinsic plasma frequency are reflected. The band pass filter may be implemented in a photo lithography tool between a source module and an exposure module. The plasma of the band pass filter may be adapted to reduce IR radiation (or other out of band radiation) exposure to the exposure module by reflecting IR radiation back to the radiation source. In an extreme ultraviolet photo lithography tool, the plasma of the band pass filter may be adapted to transmit EUV radiation.

Abstract translation: 带通滤波器包括第一电极，第二电极和由第一和第二电极产生的等离子体。 等离子体被限制在具有高于固有等离子体频率的频率的电磁波的空间区域，并且具有低于固有等离子体频率的频率的电磁波被反射。 带通滤波器可以在源模块和曝光模块之间的光刻工具中实现。 带通滤波器的等离子体可以适于通过将IR辐射反射回辐射源来减少暴露于曝光模块的IR辐射（或其它带外辐射）。 在极紫外光刻工具中，带通滤波器的等离子体可适于传输EUV辐射。

公开(公告)号：US20070004234A1

公开(公告)日：2007-01-04

申请号：US11170200

申请日：2005-06-29

Applicant: Francis Goodwin ,  Stefan Brandl ,  Brian Martinick

Inventor： Francis Goodwin ,  Stefan Brandl ,  Brian Martinick

IPC: G03C5/00 ,  H01L21/00

CPC classification number: G03F7/2041 ,  G03F7/70341

Abstract: Fluids for use in immersion lithography systems are disclosed. A resistivity-altering substance is introduced into a fluid, making it more conductive. The fluid is then disposed between an immersion head of a projection lens system and a semiconductor wafer during an exposure process. Because the fluid is conductive, electrostatic energy that may develop during the movement of the semiconductor wafer with respect to the projection lens system during the exposure process is discharged through the conductive fluid, preventing damage to an immersion head of the projection lens system, the semiconductor wafer, and sensors of a stage that supports the semiconductor wafer.

Abstract translation: 公开了用于浸没式光刻系统的流体。 将电阻率变化的物质引入流体中，使其更具导电性。 然后在曝光过程中将流体设置在投影透镜系统的浸没头与半导体晶片之间。 因为流体是导电的，所以在曝光过程中半导体晶片相对于投影透镜系统运动期间可能产生的静电能量通过导电流体被​​排出，防止损坏投影透镜系统的浸没头，半导体 晶片和支撑半导体晶片的平台的传感器。