Invention Grant
- Patent Title: Nonvolatile memory with faulty cell registration
- Patent Title (中): 具有故障单元注册的非易失性存储器
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Application No.: US13298548Application Date: 2011-11-17
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Publication No.: US08503235B2Publication Date: 2013-08-06
- Inventor: Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- Applicant: Kunihiro Katayama , Takayuki Tamura , Satoshi Watatani , Kiyoshi Inoue , Shigemasa Shiota , Masashi Naito
- Applicant Address: US TX Marshall
- Assignee: Solid State Storage Solutions, Inc.
- Current Assignee: Solid State Storage Solutions, Inc.
- Current Assignee Address: US TX Marshall
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP8-042451 19960229
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C11/29

Abstract:
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.
Public/Granted literature
- US20120213002A1 SEMICONDUCTOR MEMORY DEVICE HAVING FAULTY CELLS Public/Granted day:2012-08-23
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