Invention Grant
US08507174B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition
有权
正性抗蚀剂组合物,使用该组合物的图案形成方法和用于该组合物的化合物
- Patent Title: Positive resist composition, pattern forming method using the composition, and compound for use in the composition
- Patent Title (中): 正性抗蚀剂组合物,使用该组合物的图案形成方法和用于该组合物的化合物
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Application No.: US12673096Application Date: 2008-08-11
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Publication No.: US08507174B2Publication Date: 2013-08-13
- Inventor: Hidenori Takahashi , Kenji Wada , Sou Kamimura
- Applicant: Hidenori Takahashi , Kenji Wada , Sou Kamimura
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-209034 20070810; JP2007-245331 20070921; JP2008-005705 20080115; JP2008-074740 20080321
- International Application: PCT/JP2008/064419 WO 20080811
- International Announcement: WO2009/022681 WO 20090219
- Main IPC: G03F7/039
- IPC: G03F7/039 ; G03F7/20 ; G03F7/30

Abstract:
A positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin capable of increasing the solubility in an alkali developer by the action of an acid, and (C) a compound having a specific structure, which decomposes by the action of an acid to generate an acid, a pattern forming method using the positive resist composition, and a compound for use in the positive resist composition are provided as a positive resist composition exhibiting good performance in terms of pattern profile, line edge roughness, pattern collapse, sensitivity and resolution in normal exposure (dry exposure), immersion exposure and double exposure, a pattern forming method using the positive resist composition and a compound for use in the positive resist composition.
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