Semiconductor structure and fabricating method thereof

Invention Grant

US08507338B2 Semiconductor structure and fabricating method thereof 有权

Title translation: 半导体结构及其制造方法

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Patent Title: Semiconductor structure and fabricating method thereof
Patent Title (中): 半导体结构及其制造方法
Application No.: US13204808

Application Date: 2011-08-08
Publication No.: US08507338B2

Publication Date: 2013-08-13
Inventor: Duan-Quan Liao , Yi-Kun Chen , Xiao-Zhong Zhu
Applicant: Duan-Quan Liao , Yi-Kun Chen , Xiao-Zhong Zhu
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agent Ding Yu Tan
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/94

Semiconductor structure and fabricating method thereof

Abstract:

A fabricating method of semiconductor structure is provided. First, a substrate with a dielectric layer formed thereon is provided. The dielectric layer has a first opening and a second opening exposing a portion of the substrate. Further, a gate dielectric layer including a high-k dielectric layer and a barrier layer stacked thereon had been formed on the bottoms of the first opening and the second opening. Next, a sacrificial layer is formed on the portion of the gate dielectric layer within the second opening. Next, a first work function metal layer is formed to cover the portion of the gate dielectric layer within the first opening and the sacrificial layer. Then, the portion of the first work function metal layer and the sacrificial layer within the second opening are removed.

Abstract(Chinese):

提供了半导体结构的制造方法。首先，提供其上形成有介电层的基板。电介质层具有第一开口和露出衬底的一部分的第二开口。此外，在第一开口和第二开口的底部上形成了包括高k电介质层和层叠在其上的阻挡层的栅极电介质层。接下来，在第二开口内的栅介电层的部分上形成牺牲层。接下来，形成第一功函数金属层以覆盖第一开口和牺牲层内的栅介质层的部分。然后，去除第一功函数金属层的部分和第二开口内的牺牲层。

Public/Granted literature

US20130037889A1 SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF Public/Granted day:2013-02-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS