Invention Grant
US08521481B2 Method, program product and apparatus for modeling resist development of a lithography process
有权
方法，程序产品和设备，用于建模光刻工艺的抗蚀剂开发
- Patent Title: Method, program product and apparatus for modeling resist development of a lithography process
- Patent Title (中): 方法，程序产品和设备，用于建模光刻工艺的抗蚀剂开发
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Application No.: US11896292Application Date: 2007-08-30
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Publication No.: US08521481B2Publication Date: 2013-08-27
- Inventor: Edita Tejnil
- Applicant: Edita Tejnil
- Applicant Address: NL Veldhoven
- Assignee: ASML Masktools B.V.
- Current Assignee: ASML Masktools B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F7/60
- IPC: G06F7/60 ; G06F17/10 ; G06F17/50 ; G03F1/00
Abstract:
A method of generating a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation includes a resist performance component, and the resist performance component includes a non-linear model of the resist performance.
Public/Granted literature
- US20080059128A1 Method, program product and apparatus for modeling resist development of a lithography process Public/Granted day:2008-03-06
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