Invention Grant
US08524324B2 Complex oxide film and method for producing same, dielectric material including complex oxide film, piezoelectric material, capacitor, piezoelectric element, and electronic device
有权
复合氧化物膜及其制造方法，包括复合氧化膜，压电材料，电容器，压电元件和电子器件的介电材料
- Patent Title: Complex oxide film and method for producing same, dielectric material including complex oxide film, piezoelectric material, capacitor, piezoelectric element, and electronic device
- Patent Title (中): 复合氧化物膜及其制造方法，包括复合氧化膜，压电材料，电容器，压电元件和电子器件的介电材料
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Application No.: US11997090Application Date: 2006-07-28
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Publication No.: US08524324B2Publication Date: 2013-09-03
- Inventor: Akihiko Shirakawa , Hirofumi Fukunaga , Chunfu Yu
- Applicant: Akihiko Shirakawa , Hirofumi Fukunaga , Chunfu Yu
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-221334 20050729
- International Application: PCT/JP2006/314997 WO 20060728
- International Announcement: WO2007/013596 WO 20070201
- Main IPC: B05D3/10
- IPC: B05D3/10 ; B05D3/14
Abstract:
The invention relates to a method for a complex oxide film having a high relative dielectric constant formed on a substrate surface by wet-treatment method and a production process of the complex oxide film comprising a step of washing the complex oxide film with an acid solution of pH 5 or less to thereby reduce salts in the film. Further, the invention relates to a dielectric material and a piezoelectric material containing the complex oxide film, a capacitor and a piezoelectric element including the material, and a electronic device comprising the element.
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