Invention Grant
- Patent Title: Scatterometry measurement of asymmetric structures
- Patent Title (中): 不对称结构的散射测量
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Application No.: US12696974Application Date: 2010-01-29
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Publication No.: US08525993B2Publication Date: 2013-09-03
- Inventor: Silvio J. Rabello , William A. McGahan , Jie Li , Yongdong Liu
- Applicant: Silvio J. Rabello , William A. McGahan , Jie Li , Yongdong Liu
- Applicant Address: US CA Milpitas
- Assignee: Nanometrics Incorporated
- Current Assignee: Nanometrics Incorporated
- Current Assignee Address: US CA Milpitas
- Agency: Silicon Valley Patent Group LLP
- Main IPC: G01J4/00
- IPC: G01J4/00

Abstract:
Asymmetry metrology is performed using at least a portion of Mueller matrix elements, including, e.g., the off-diagonal elements of the Mueller matrix. The Mueller matrix may be generated using, e.g., a spectroscopic or angle resolved ellipsometer that may include a rotating compensator. The Mueller matrix is analyzed by fitting at least a portion of the elements to Mueller matrix elements calculated using a rigorous electromagnetic model of the sample or by fitting the off-diagonal elements to a calibrated linear response. The use of the Mueller matrix elements in the asymmetry measurement permits, e.g., overlay analysis using in-chip devices thereby avoiding the need for special off-chip targets.
Public/Granted literature
- US20110080585A1 Scatterometry Measurement of Asymmetric Structures Public/Granted day:2011-04-07
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