Invention Grant
US08530980B2 Gate stack structure with etch stop layer and manufacturing process thereof
有权
具有蚀刻停止层的栅极叠层结构及其制造工艺
- Patent Title: Gate stack structure with etch stop layer and manufacturing process thereof
- Patent Title (中): 具有蚀刻停止层的栅极叠层结构及其制造工艺
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Application No.: US13094953Application Date: 2011-04-27
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Publication No.: US08530980B2Publication Date: 2013-09-10
- Inventor: Kun-Hsien Lin , Hsin-Fu Huang , Chi-Mao Hsu , Chin-Fu Lin , Chun-Yuan Wu
- Applicant: Kun-Hsien Lin , Hsin-Fu Huang , Chi-Mao Hsu , Chin-Fu Lin , Chun-Yuan Wu
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A gate stack structure with an etch stop layer is provided. The gate stack structure is formed over a substrate. A spacer is formed on a sidewall of the gate stack structure. The gate stack structure includes a gate dielectric layer, a barrier layer, a repair layer and the etch stop layer. The gate dielectric layer is formed on the substrate. The barrier layer is formed on the gate dielectric layer. The barrier layer and an inner sidewall of the spacer collectively define a trench. The repair layer is formed on the barrier layer and an inner wall of the trench. The etch stop layer is formed on the repair layer.
Public/Granted literature
- US20120273902A1 GATE STACK STRUCTURE WITH ETCH STOP LAYER AND MANUFACTURING PROCESS THEREOF Public/Granted day:2012-11-01
Information query
IPC分类:
