Invention Grant
US08541264B2 Method for forming semiconductor structure having protection layer for preventing laser damage
有权
用于形成具有用于防止激光损伤的保护层的半导体结构的方法
- Patent Title: Method for forming semiconductor structure having protection layer for preventing laser damage
- Patent Title (中): 用于形成具有用于防止激光损伤的保护层的半导体结构的方法
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Application No.: US13548039Application Date: 2012-07-12
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Publication No.: US08541264B2Publication Date: 2013-09-24
- Inventor: Jian-Hong Lin , Kang-Cheng Lin , Tzu-Li Lee
- Applicant: Jian-Hong Lin , Kang-Cheng Lin , Tzu-Li Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
A method for forming a semiconductor structure is provided to prevent energy that is used to blow at least one fuse formed on a metal layer above a semiconductor substrate from causing damage on the structure. The semiconductor structure includes a device, guard ring, protection ring, and at least one protection layer. The device is constructed on the semiconductor substrate underneath the fuse. A seal ring, which surrounds the fuse, is constructed on at least one metal layer between the device and the fuse for confining the energy therein. The protection layer is formed within the seal ring, on at least one metal layer between the device and the fuse for shielding the device from being directly exposed to the energy.
Public/Granted literature
- US20120276732A1 PROTECTION LAYER FOR PREVENTING LASER DAMAGE ON SEMICONDUCTOR DEVICES Public/Granted day:2012-11-01
Information query
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